Remote Plasma Source (RPS)

Dry plasma chemical etching

Dry plasma chemical etching by means of radicals generated in the plasma chamber of a remote plasma source (RPS) is suitable to avoid damages of micro-structured substrates made of metals like nickel, copper or gold. In the RPS the plasma is generated and exists only in the chamber of the source. Only radicals are extracted out of the RPS. That’s why it’s used for etching processes where ion bombardment and high thermal strain must be avoided. The etching process is a chemical process, where the radicals react with the substrate surface atoms forming gaseous molecules. The benefit is a damage-free, dry and clean substrate surface.

Schematic of the RPS with oxygen as working fluid where the exhaust gas is carbon monoxide and carbon dioxide. (c)
Schematic of the RPS with oxygen as working fluid where the exhaust gas is carbon monoxide and carbon dioxide.
Steffen Pauly M. Sc.
 

Steffen Pauly M. Sc.

Ph. D. Student, Plasma Technology

Matthias Walker
Dr.-Ing.

Matthias Walker

Head of Administration / Head of Plasma Technology

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